基本情况

出生年月：1985.12

职称：教授

最高学位：博士

主要研究方向：微纳力学、材料设计

导师类别：学术型硕导、专业型硕导

工作单位：新材料力学理论与应用湖北省重点实验室、物理与力学学院

联系电话：18327287001

Email:guodonglee@whut.edu.cn

    教育及工作经历

2018.12-至今，武汉理工大学，材料复合新技术国家重点实验室，理学院，教授

2015.07-2018.08，美国西北大学，材料系，博士后

2014.03-2015.07，美国加州理工学院，材料系，博士后 

2010.09-2013.06，武汉理工大学，固体力学，工学博士

2007.09-2010.06，武汉理工大学，固体力学，工学硕士

2003.09-2007.06，武汉理工大学，工程力学，工学学士

    奖励情况

学术奖励

2018年国际热电学会博士后学者奖

人才计划

    2020年国家级高层次青年人才

    2021年湖北省博士后卓越人才跟踪培养计划

    2019年湖北省青年科技晨光计划

    2020年武汉市黄鹤英才优秀青年人才

    近期主持科研项目

1.2022-2025，多维度功能基元及序构与变革性热电材料研究，国家自然科学基金重大研究计划重点项目子课题

2.2021-2023，热电材料与微型器件的本征力学性能增强理论与应用，国家自然科学基金优秀青年科学基金项目

3.2022-2024，纳米孪晶对(Ga,In)Sb热电材料热传导和力学行为的影响机制研究，武汉市知识创新专项项目(基础研究)

4.2020-2022，纳米孪晶对Bi2Te3基热电材料力学性能的影响机制研究，湖北省自然科学基金青年项目

    近期代表性学术成果

学术论文：

1.Guodong Li, Umut Aydemir, Sergey I. Morozov, Max Wood, Qi An*,Pengcheng Zhai, Qingjie Zhang*, William A. Goddard III, and G.Jeffrey Snyder*, Superstrengthening Bi2Te3through Nanotwinning. Physical Review Letters, 2017, 119(8):085501(1)-085501(6).

2. GuodongLi*, Sergey I. Morozov, Qingjie Zhang*, Qi An*, Pengcheng Zhai, andG. Jeffrey Snyder, Enhanced Strength Through Nanotwinning in theThermoelectric Semiconductor InSb. Physical Review Letters, 2017,119(21): 215503(1)-085501(6).

3.Guodong Li, Qi An, Bo Duan, Leah Borgsmiller, Muath Al Malki,Matthias Agne, Umut Aydemir, Pengcheng Zhai, Qingjie Zhang*, SergeyI. Morozov, William A. Goddard III*, and G. Jeffrey Snyder*, Fracturetoughness of thermoelectric materials. Materials Science andEngineering R, 2021, 144: 100607.

4.Xiege Huang, Xiaobin Feng, Qi An, Ben Huang, Xiaolian Zhang, ZhongtaoLu, Guodong Li*, Pengcheng Zhai, Bo Duan*, G Jeffrey Snyder, WilliamA. Goddard III*, and Qingjie Zhang, Stacking fault-inducedstrengthening mechanism in thermoelectric semiconductor Bi2Te3.Matter, 2023, 6, 3087-3098.

5.Min Huang, Pengcheng Zhai, Guodong Li*, Qi An, Sergey I. Morozov,Wenjuan Li, Qingjie Zhang*, and William A. Goddard III*,Nanotwin-induced ductile mechanism in thermoelectric semiconductorPbTe. Matter, 2022, 5, 1839-1852.

6.Hongtao Wang, Xiaobin Feng, Zhongtao Lu, Bo Duan*, Houjiang Yang,Luoqi Wu, Ling Zhou, Pengcheng Zhai, G Jeffrey Snyder, Guodong Li*,and Qingjie Zhang, Synergetic Enhancement of Strength-ductility andThermoelectric Properties of Ag2Te by Domain Boundaries.Advanced Materials, 2023, 35: 2302969.

7. ZhongtaoLu, Xiege Huang, Xiaolian Zhang, Pengchen Zhai, William A. GoddardIII, and Guodong Li*, A Physical Model of Nanotwin Unit andOrientation Organization for Designing Mechanical Performance: Casesof InSb, GaAs, ZnS. Advanced Functional Materials, 2024, 34: 2309174.

8.Houjiang Yang, Luoqi Wu, Xiaobin Feng, Xiege Huang, Hongtao Wang, BoDuan*, Guodong Li*, Pengcheng Zhai, and Qingjie Zhang, ConstructingCoated Grain Nanocomposites and Intracrystalline Precipitates toSimultaneously Improve the Thermoelectric and Mechanical Propertiesof SnTe by MgB2 and Sb Co-Doping. Advanced FunctionalMaterials, 2024, 2316344.

9.Min Huang, Guodong Li*, Qi An, Pengcheng Zhai, and William A. GoddardIII, Structural failure of layered thermoelectric In4Se3-δsemiconductors is dominated by shear slippage. Acta Materialia, 2020,187: 84-90.

10.Guodong Li, Jiangang He, Qi An, Sergey I Morozov, Shiqiang Hao,Pengcheng Zhai*, Qingjie Zhang, William A Goddard III, and G. JeffreySnyder*, Dramatically reduced lattice thermal conductivity of Mg2Sithermoelectric material from nanotwinning. Acta Materialia, 2019,169: 9-14.

11.Guodong Li*, Umut Aydemir, Sergey I. Morozov, Samuel A. Miller, QiAn, William A. Goddard III, Pengcheng Zhai, Qingjie Zhang*, and G.Jeffrey Snyder, Mechanical properties in thermoelectric oxides: Idealstrength, deformation mechanism, and fracture toughness. ActaMaterialia, 2018, 149: 341-349.

12.Guodong Li#, Qi An#, William A. Goddard III*, Riley Hanus, PengchengZhai, Qingjie Zhang*, and G. Jeffrey Snyder*, Atomistic explanationof brittle failure of thermoelectric skutterudite CoSb3.Acta Materialia, 2016, 103: 775-780.

13.Haoqin Ma, Xiege Huang, Zhongtao Lu, Xiaobin Feng, Bo Duan, WenjuanLi, Yinhan Liu, Pengcheng Zhai, Guodong Li*, and Qingjie Zhang,Origin of shear induced ‘catching bonds’ on half Heuslerthermoelectric compounds XFeSb (X = Nb, Ta) and SnNiY (Y = Ti, Zr,Hf). npj Computational Materials, 2024, 10: 61.

14. ZhongtaoLu, Ben Huang, Guodong Li*, Xiaolian Zhang, Qi An, Bo Duan, PengchengZhai, Qingjie Zhang*, and William A. Goddard III*, Shear induceddeformation twinning evolution in thermoelectric InSb. npjComputational Materials, 2021, 7: 111.

15. GuodongLi*, Qi An, Sergey I. Morozov, Bo Duan, William A. Goddard III,Qingjie Zhang*, Pengcheng Zhai, and G. Jeffrey Snyder*, Ductiledeformation mechanism in semiconductor α-Ag2S. npjComputational Materials, 2018, 4: 44.