兰州大学理学学学士，物理系半导体专业；
中国电子科技集团公司第十三研究所工学硕士，微电子与固体电子学专业；
日本东京大学工学博士，应用物理专业。
研究方向：
半导体光电子学 宽带隙半导体 垂直腔面发射激光器 （VCSEL） 发光二极管（LED） 太阳能电池 低维结构
主讲课程：
固体电子学（本科生课）
专业英语（研究生课） 氮化物半导体材料与器件专题（研究生课）
学术兼职：
教育部紫外光发射材料与技术重点实验室学术委员会 教育部新材料界面科学与工程重点实验室学术委员会 福建省光电技术与器件重点实验室学术委员会 福建省光传输与变换重点实验室学术委员会
厦门大学学报（自然科学版）编委 Scientific Reports编委
Nano-Micro Letters编委
成果奖励：
闽江学者特聘教授
2009年获得厦门大学中国银行奖
2010年获得厦门大学何宜慈奖教金
入选爱思唯尔（Elsevier）社发布的2014~2017年中国高被引学者榜单
课题项目：
（1）固态紫外器件高光提取效率和光子调控工艺技术研究，国家重点研发计划战略性先进电子材料“第三代半导体固态紫外光源材料及器件关键技术”，2016-2021，主持； （2）GaN基垂直腔面发射激光器基础研究，国家基金委重点项目，2016-2020，主持； （3）III族氮化物半导体微谐振腔中自发辐射特性研究，国家基金委面上项目，2015-2018，主持。
代表作：
1. Paul Onkundi Nyangaresi, Yi Qin, Guolong Chen, Baoping Zhang*, Yinghua Lu, Liang Shen*, “Effects of single and combined UV-LEDs on inactivation and subsequent reactivation of E. coli in water disinfection”, Water Research 147 (2018) 331-341.
2. R. B. Xu, Y. Mei, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, D. Zhang, B. P. Zhang*, and Jianping Liu*, "Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination", IEEE Transactions on Electron Devices, 65 (10) (2018) 4401-4406.
3. Z. M. Zheng, Y. Q. Li, Onkundi Paul, H. Long*, S. Matta, M. Leroux, J. Brault, L. Y. Ying, Z. W. Zheng, and B. P. Zhang*, “Loss analysis in nitride deep ultraviolet planar cavity,” J. Nanophoton. 12(4) (2018) 043504.
4. X. M. Cai, Z. W. Zheng, H. Long, L. Y. Ying, and B. P. Zhang*, "Abnormal staircase-like I-V curve in InGaN quantum well solar cells", Appl. Phys. Lett. 112 (2018) 161102.
5. (REVIEW) H. C. Yu#, Z. W. Zheng#, Y. Mei, R. B. Xu, J. P. Liu, H. Yang, B. P. Zhang,*, T. C. Lu, and H. C. Kuo,* "Progress and prospects of GaN-based VCSEL from near UV to green emission", Progress in Quantum Electronics 57 (2018) 1–19.
6. J. Z. Wu , H. Long*, X. L. Shi, L. Y. Ying, Z. W. Zheng , and B. P. Zhang*, "Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths", IEEE Transactions on Electron Devices, 65 (6) (2018) 2504-2508.
7. Y. Mei, R. B. Xu, H. Xu, L. Y. Ying, Z. W. Zheng, B. P. Zhang*, M. Li, and J. Zhang, " A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures"[J], Semiconductor Science and Technology, 33 (2018) 015016.
8. Y. Mei, R. B. Xu, G. E. Weng, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang*, Werner Hofmann, J. P. Liu*, J. Zhang, M. Li, J. Zhang,Sr. "Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet"[J], Appl. Phys. Lett, 111 (2017) 121107.
9. R. B. Xu, Y. Mei, L. Y. Ying, Z. W. Zheng, W. Hofmann, J. P. Liu, H. Yang, M. Li, J. Zhang, B. P. Zhang*, "Simultaneous blue and green lasing of GaN based vertical-cavity surface-emitting lasers"，Semiconductor Science and Technology，32 (2017)105012.
10. Z. W. Zheng, H. Yu, B. C. Ren, L. M. Zhou, H. Y. Fu, X. Cheng, L. Y. Ying, H. Long and B. P. Zhang*, "Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication", ECS Journal of Solid State Science and Technology, 6(9)(2017) R135-R138.
11. Y. Mei, G. E. Weng, B. P. Zhang*, J. P. Liu*, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang and H. C. Kuo, "Quantum dot vertical-cavity surface-emitting lasers covering the “green gap”", Light: Sci. & Appl. 6 (2017) e16199.
12. Z. W. Zheng, M. H. Lai, L. Y. Ying and B. P. Zhang*, "Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration". Applied Physics A, 122 (2016) 932.
13. H. Long, X. H. Feng, Y. Wei, T. J. Yu, S. S. Fan, L. Y. Ying and B. P. Zhang*,” Carbon nanotube assisted Lift off of GaN layers on sapphire ”, Applied Surface Science, 394 (2016) 598-603.
14. M. Chen, G. Q. Gu, B. P. Zhang*, Z. P. Cai and L. Wei, "Self-assembled on-chip hemispherical microresonators for high sensitivity temperature sensing", Optics Express, 24 (2016) 26948.
15. G. E. Weng, Y. Mei, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Y. K. Bu, Z. C. Li, H. Yang, and B. P. Zhang*, "Low Threshold Continuous-Wave Lasing of Yellow-Green InGaN-QD Vertical-Cavity Surface-Emitting Lasers", Optics Express, 24 (2016) 15546.
16. H. Long, Y. P. Zeng, L. Y. Ying and B. P. Zhang*, “Coplanar metal-semiconductor-metal light emitting devices with n++ InGaN layer and its application for display”, Semiconductor Science and Technology, R2 (2016) 102402.